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US 5,399,900 AGranted
Isolation region in a group III-V semiconductor device and method of making the same
AssigneeEastman Kodak Company
InventorsKei-Yu Ko, Samuel Chen, Shuit-Tong Lee
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Abstract
A semiconductor device having in a body of a group III-V semiconductor material at least one isolation region which is stable at temperatures up to about 900.degree. C. The isolation region is formed of ions of a group III or V element which are implanted into the body and then thermally annealed at a temperature of between 650.degree. C. and 900.degree. C. This provides the regions with voids which remove free carriers and makes the region highly resistive.
Claims26
A semiconductor device, comprising:
- a body of a group III-V semiconductor material having a surface;
- and
- a first isolation region in the body extending from the surface, said first isolation region being implanted with one of aluminum and silicon at a level ranging from about 5.times.10.sup.13 ions/cm.sup.2 to 1.times.10.sup.14 ions/cm.sup.2, said first isolation region containing voids which remove free carriers and make the first isolation region highly resistive.
An apparatus comprising:
- a body of group III-V semiconductor material having a surface;
- at least two semiconductor devices formed on said surface of said body;
- and
- an isolation region formed in said body between said semiconductor devices, said isolation region being implanted with one of aluminum and silicon at a level ranging from about 5.times.10.sup.13 ions/cm.sup.2 to 1.times.10.sup.14 ions/cm.sup.2, said isolation region containing voids which remove free carriers and make said isolation region highly resistive.
1 more element
Dependencies are inferred from the claim text.