Camera device and method of manufacturing the same

A camera device having a photoelectric converting portion, said photoelectric converting portion comprising:

• a hole injection stop layer for preventing external implantation of holes;
• a first photoelectric converting layer formed on a surface of said hole injection stop layer and having first spectral sensitivity characteristics by including selenium;
• a second photoelectric converting layer formed on a surface of said first photoelectric converting layer and having second spectral sensitivity characteristics which are different from those of said first photoelectric converting layer by including a material other than said selenium;
• and
• an electron injection stop layer formed on a surface of said second photoelectric converting layer for preventing external implantation of electrons, wherein said material of high sensitivity in the infrared ray region includes one selected between amorphous silicon germanium and amorphous silicon tin.

A camera device having a photoelectric converting portion, said photoelectric converting portion comprising:

• a hole injection stop layer for preventing external implantation of holes;
• a first photoelectric converting layer formed on a surface of said hole injection stop layer and having first spectral sensitivity characteristics by including selenium;
• a film for preventing recrystallization of selenium formed on a surface of said first photoelectric converting layer,
• a second photoelectric converting layer formed on a surface of said film for preventing recrystallization of selenium layer and having second spectral sensitivity characteristics which are different from those of said first photoelectric converting layer, wherein said second photoelectric layer is devoid of selenium;
• and
• an electron injection stop layer formed on a surface of said second photoelectric converting layer for preventing external implantation of electrons, wherein a film for preventing recrystallization of selenium is interposed between said first photoelectric converting layer and said second photoelectric converting layer.

A camera device having a photoelectric converting portion, said photoelectric converting portion comprising:

• a hole injection stop layer for preventing external implantation of holes;
• a first photoelectric converting layer formed on a surface of said hole injection stop layer and having first spectral sensitivity characteristics by including selenium, said first photoelectric converting layer including a material for improving the heat resistance of selenium,
• a second photoelectric converting layer formed on a surface of said first photoelectric converting layer and having second spectral sensitivity characteristics which are different from those of said first photoelectric converting layer, wherein said second photoelectric converting layer is devoid of selenium;
• and
• an electron injection stop layer formed on a surface of said second photoelectric converting layer for preventing external implantation of electrons.

A camera device, comprising:

• a glass substrate;
• a transparent conductive film formed on a surface of said glass substrate;
• a hole injection stop layer formed on a surface of said transparent conductive film for preventing external implantation of holes;
• a first photoelectric converting layer formed on a surface of said hole injection stop layer and having first spectral sensitivity characteristics by including selenium;
• a second photoelectric converting layer formed on a surface of said first photoelectric converting layer and having second spectral sensitivity characteristics which are different from those of said first photoelectric converting layer, wherein said second photoelectric converting layer is devoid of selenium;
• and
• an electron injection stop layer formed on a surface of said second photoelectric converting layer for preventing external implantation of electrons.

A camera device, comprising:

• a semiconductor substrate having a main surface;
• a pixel electrode electrically connected to a predetermined region on the main surface of said semiconductor substrate;
• a hole injection stop layer formed on a surface of said pixel electrode for preventing external implantation of holes;
• a first photoelectric converting layer formed on a surface of said hole injection stop layer and having first spectral sensitivity characteristics, wherein said first photoelectric converting layer is devoid of selenium;
• a second photoelectric converting layer formed on a surface of said first photoelectric converting layer and having second spectral sensitivity characteristics which are different from those of said first photoelectric converting layer by including selenium;
• an electron injection stop layer formed on a surface of said second photoelectric converting layer for preventing external implantation of electrons;
• and
• a transparent conductive film formed on a surface of said electron injection stop layer.