Plasma treatment apparatus
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorTakahiro Maruyama
Life of this patent
Estimating the term…
Abstract
An electromagnetic coil and the microwave generating source are provided so that the ECR discharge occurs to the reactive gas within the reaction chamber by generating a magnetic field in the reaction chamber and by introducing the microwave into it, for generating plasma. The sample table for placing the wafer is installed within the reaction chamber, on which wafer treatment like etching is effected by the plasma generated within the reaction chamber. The reaction chamber includes a first portion and a second portion which is insulated from the first portion by an insulating portion. The first portion and the second portion are structured so that the potential difference is applied by way of the power supply.
Claims10
A plasma treatment apparatus for performing a predetermined treatment at a main surface of a substrate by generating plasma by way of electron cyclotron resonance discharge above the main surface of said substrate placed within a reaction chamber, and having a peripheral wall portion surrounding said plasma, wherein
- said peripheral wall portion includes
- first electric field applying means arranged to apply a first voltage and surrounding an outer peripheral portion of a first space for applying an electric field only at the outer peripheral portion of said first space,
- second electric field applying means electrically insulated from said first electric field applying means, arranged to apply a second voltage different from said first voltage, and surrounding an outer peripheral portion of a second space different from said first space for applying an electric field only at the outer peripheral portion of said second space, and
- power supply means for applying said first and second voltages to said first and second electric field applying means.
A plasma treatment apparatus for performing a predetermined treatment at a main surface of a substrate by generating plasma by way of the electron cyclotron resonance discharge above the main surface of said substrate, comprising:
- a base for placing said substrate;
- a reaction chamber which includes a peripheral wall portion surrounding said plasma and accommodates said base;
- magnetic field generating means disposed outside said peripheral wall portion for generating a magnetic field within said reaction chamber;
- microwave introducing means for introducing the microwave into said reaction chamber;
- wherein
- said peripheral wall portion includes
- first electric field applying means arranged to apply a first voltage and surrounding an outer peripheral portion of a first space for applying an electric field only at the outer peripheral portion of said first space,
- second electric field applying means electrically insulated from said first electric field applying means, arranged to apply a second voltage different from said first voltage, and surrounding an outer peripheral portion of a second space different from said first space for applying an electric field only at the outer peripheral portion of said second space, and
- power supply means for applying said first and second voltages to said first and second electric field applying means.
Dependencies are inferred from the claim text.