Method of manufacturing semiconductor device by forming barrier metal layer between substrate and wiring layer
AssigneeSony Corporation
InventorHirofumi Sumi
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Abstract
A method of manufacturing a semiconductor device which comprises steps of forming a diffusion region to a semiconductor substrate; forming silicon compound film on the diffusion region; forming a metal film on the silicon compound film to form a metal silicide film and, further forming an interlayer film; forming a barrier metal material film on the interlayer film; then patterning the barrier metal material film to obtain a barrier metal layer, subsequently; patterning the interlayer film to form a contact hole and burying a wiring material into the contact hole thereby forming a wiring.
Claims4
A method of manufacturing a semiconductor device which comprises the steps of:
- forming a diffusion region in a semiconductor substrate,
- forming a silicon compound film on said diffusion region,
- forming a metal film on said silicon compound film,
- converting the metal film and silicon compound film into a metal silicide film,
- forming an insulating interlayer film on said metal silicide film,
- forming a barrier metal layer on said insulating interlayer film, then
- patterning said barrier metal layer to expose a selected portion of the insulating interlayer film, subsequently
- etching the exposed selected portion of said insulating interlayer film to form at least one contact hole exposing a portion of the silicide film, and
- depositing a wiring material into said contact hole and into contact with said silicide film to form a wiring.
Dependencies are inferred from the claim text.