Method of providing an ohmic type contact on p-type Zn(S)Se
AssigneePhilips Electronics North America Corporation
InventorsNikhil R. Taskar, Babar A. Khan, Donald R. Dorman
Life of this patent
Estimating the term…
Abstract
A method of providing an improved ohmic contact on an p-type ZnSe or ZnSSe layer provided on a substrate comprising immersing the layer in a Hg bath heated to a temperature in excess of 200.degree. C. for more than two hours.
Claims7
A method of providing an improved ohmic type contact on a p-type ZnSe layer provided on a substrate, said method comprising immersing said ZnSe layer in a Hg bath, heated to a temperature in excess of 200.degree. C., for a time greater than 120 minutes, thereby providing a layer of Hg.sub.x Zn.sub.1-x Se on said layer of ZnSe the value x varying from 0 at the surface of the ZnSe layer to 1 at the surface of the Hg.sub.x Zn.sub.1-x Se layer.
A method of providing an improved ohmic type contact on a p-type ZnSSe layer provided on a substrate, said method comprising immersing said ZnSSe layer in a Hg bath, heated to a temperature in excess of 200.degree. C., for a time greater than 120 minutes thereby providing a layer of Hg.sub.x Zn.sub.1-x Se.sub.b S.sub.c on said layer of ZnSSe the value x varying from 0 at the surface of the ZnSSe layer, b and c each having a value of 0-1 and the sum of the values of b+c being 1.
Dependencies are inferred from the claim text.