Method of growing compound semiconductor
AssigneeFujitsu Limited
InventorTatsuya Ohori
Life of this patent
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Abstract
A first monocrystalline group III-V compound semiconductor layer is formed on an Si substrate. The surface of the first monocrystalline group III-V compound semiconductor layer is polished. A second monocrystalline group III-V compound semiconductor layer is grown on the polished surface by a metal organic chemical vapor deposition, by using as a group III source material at least partially a source material of group III atoms bonded to ethyl radical at the initial stage of growth, and thereafter by using as the group III source material a source material of group III atoms bonded to methyl radical. A grown layer with a flat surface can be obtained. The surface flatness can be improved further by adding In as a group III element.
Claims16
A method of growing compound semiconductor crystal comprising:
- a first growth step of growing a first monocrystalline group III-V compound semiconductor layer on an Si substrate:
- a step of polishing said first monocrystalline group III-V compound semiconductor layer to obtain a polished surface;
- and
- a second growth step of epitaxially growing a second monocrystalline group III-V compound semiconductor layer on said polished surface by a metal organic chemical vapor deposition method, by using, as a group III source material, at least partially a source material of group III atoms bonded to ethyl radical at least at the initial stage of said second growth step, and thereafter by using, as a group III source material, at least partially a source material of group III atoms bonded to methyl radical.
A method of growing a GaAs monocrystalline layer comprising:
- a first growth step of growing a first monocrystalline GaAs layer on a Si substrate;
- a step of polishing said first monocrystalline GaAs layer to obtain a polished surface;
- a second growth step of epitaxially growing a second monocrystalline GaAs layer on said polished surface by a metal organic chemical vapor deposition method, by using triethylgallium as Ga source;
- and
- a third growth step of epitaxially growing a third monocrystalline layer of Al.sub.x In.sub.y Ga.sub.z As (x+y+z=1, 0.ltoreq.x, y, z.ltoreq.1) on said second monocrystalline GaAs layer by using trimethylgallium as Ga source.
Dependencies are inferred from the claim text.