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US 5,399,521 AGranted
Method of semiconductor layer growth by MBE
AssigneeTexas Instruments Incorporated
InventorsFrancis G. Celii, Yung-Chung Kao, Andrew J. Purdes
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Abstract
Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of integrated mass spectormeter (204) signals. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes.
Claims11
A method of molecular beam epitaxy layer growth, comprising the steps of:
- (a) directing a first beam of growth species at a wafer in a growth chamber;
- (b) repeatedly measuring the flux of the reflection of said first beam from said wafer;
- (c) integrating the flux measurements, from measuring the flux of the reflection of said first beam from said wafer over time;
- and
- (d) terminating said first beam when the integrated flux measurements reaches a first level.
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A method of molecular beam epitaxy stacked layer growth, comprising the steps of:
- (a) providing sources for B.sub.1, B.sub.2, . . . B.sub.N, where B.sub.J is a beam of a Jth growth species and N is a positive integer greater than two and said Jth growth species differ from each other;
- (b) directing a first subset of B.sub.1, B.sub.2, , , , B.sub.N at a wafer in a growth chamber;
- (c) repeatedly measuring the fluxes of the reflection of at least one of said first subset of beams from said wafer;
- (d) integrating the flux measurements from measuring the fluxes of the reflection of said at least one of said first subset of beams for said wafer over time;
- (e) changing to a second subset of said B.sub.1, B.sub.2, , , , B.sub.N directed at said wafer when an integrated flux measurement reaches a first level, where said first and second subsets have at least two beams in common;
- (f) repeatedly measuring the flux of the reflection of at least one of said second subset of beams from said wafer beginning with said change to said second subset of said B.sub.1, B.sub.2, , , , B.sub.N ;
- (g) integrating the flux measurements of said second subset over time;
- and
- (h) changing to a third subset of said B.sub.1, B.sub.2, , , , B.sub.N when the integrated flux measurements reaches a second level.
6 more elements
Dependencies are inferred from the claim text.