Semiconductor fabricating process
AssigneeSony Corporation
InventorHironori Tsukamoto
Life of this patent
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Abstract
In order to reduce a junction leakage current and obtain a shallow junction, ion implantation to form a doped region, such as an active region of a transistor, is followed by a low-temperature annealing and pulsed laser irradiation. The annealing temperature and time of the low-temperature anneal are 600.degree. C. and one hour, for example. The subsequent pulsed laser irradiation is performed by a XeCl laser, for example, with irradiation energy of 700 mJ/cm2, and a pulse width of 44 nsec. This process can reduce the leakage current by effectively removing points defects around the junction, and enables activation without increasing the depth of the junction.
Claims15
A semiconductor device fabricating process, comprising the steps of:
- ion-implanting impurity ions into a semiconductor substrate to form a shallow ion implant layer in a surface region of the semiconductor substrate;
- annealing the semiconductor substrate by heating the semiconductor substrate which has the shallow ion implant layer to a temperature of 550.degree. C. to 850.degree. C. to reduce point defects but without deepening the shallow ion implant layer;
- radiating a pulsed laser on the semiconductor substrate to activate the implanted ions of the shallow ion implant layer while maintaining the depth of the shallow ion implant layer;
- and performing said radiating step by a laser beam having an energy density in a range of 650 to 1100 mJ/cm.sup.2.
Dependencies are inferred from the claim text.