Method of manufacturing CuInSe.sub.2 thin film solar cell

A method of manufacturing a CuInSe2 base solar cell, comprising the steps of:

• forming a CuInSe2 active layer on a substrate;
• irradiating said CuInSe2 Active layer with light having a photon energy not less than 1 eV;
• and
• detecting a peak value of luminous intensity of light emitted by said CuInSe2 layer in response to said irradiation with light having a photon energy not less than 1.0 eV over a spectral range of 0.8-0.9 eV;
• and
• comparing said peak value with a reference value of luminous intensity to determine whether said peak value exceeds said reference value of luminous intensity.

A method of manufacturing a CuInSe.sub.2 based solar cell, comprising the steps of:

• forming a CuInSe2 active layer on a substrate;
• irradiating said CuInSe2 active layer with light having a photon energy not less than 1.0 eV;
• detecting a first peak value of luminous intensity of light emitted by said CuInSe2 layer in response to said irradiation with light having a photon energy not less than 1.0 eV over a spectral range of 0.8-0.9 eV;
• detecting a second peak value of luminous intensity over a spectral range of 0.9-1.0 eV;
• and
• comparing said first and second peak values to determine whether said first peak value exceeds said second peak value.

A method of manufacturing a CuInSe.sub.2 based solar cell, comprising the steps of:

• forming a CuInSe.sub.2 active layer on a substrate;
• forming a film layer including a compound selected from the group of CdS and CdZnS over said active layer;
• irradiating said CuInSe.sub.2 active layer with light having a photon energy not less than 1.0 eV through said film layer;
• detecting a peak value of luminous intensity of light emitted by said CuInSe.sub.2 layer through said film layer in response to said irradiation with said light over a spectral range of 0.8-0.9 eV;
• and
• comparing said peak value of luminous intensity with a reference value of luminous intensity to determine whether said peak value exceeds said reference value of luminous intensity.

A method of manufacturing a CuInSe.sub.2 based solar cell, comprising the steps of:

• forming a CuInSe.sub.2 active layer on a substrate;
• forming a film layer including a compound selected from the group of CdS and CdZnS over said active layer;
• irradiating said CuInSe.sub.2 active layer with light having a photon energy not less than 1.0 eV through said film layer;
• detecting a first peak value of luminous intensity of light emitted by said CuInSe.sub.2 layer through said film layer in response to said irradiation with said light over a spectral range of 0.8-0.9 eV;
• detecting a second peak value though said film layer over a spectral range of 0.9-1.0 eV;
• and
• comparing said first peak value with said second peak value to determine whether said first peak value exceeds said second value.

A method of manufacturing a CuInSe.sub.2 thin film solar cell, comprising:

• forming at least one conductive surface layer on a substrate;
• forming a CuInSe.sub.2 thin film on said at least one conductive surface layer;
• irradiating said thin film with light having a photon energy not less than 1.0 eV at a predetermined temperature;
• and
• measuring a luminous intensity of luminescence light emitted from said thin film.

A method of manufacturing a CuInSe.sub.2 based thin film solar cell, comprising the steps of:

• forming at least one conductive surface layer on a substrate;
• forming a CuInSe.sub.2 thin film on said at least one conductive surface layer;
• irradiating said thin film with light having a photon energy not less than 1.0 eV at a temperature of 67.degree. K. to 87.degree. K. or a temperature not greater than 10.degree. K.;
• and
• measuring a luminous intensity of luminescence radiation emitted from said thin film, and the manufacturing process proceeds to a succeeding step only if the maximum luminous intensity, in a range of 0.8.about.0.9 eV of a spectrum of said luminescence radiation, has a value not lower than a reference value.

A method of manufacturing a CuInSe.sub.2 based thin film solar cell, comprising the steps of:

• forming at least one conductive surface layer on a substrate;
• forming a CuInSe.sub.2 thin film on said at least one conductive surface layer;
• irradiating said thin film with light having a photon energy not less than 1.0 eV at a temperature of 67.degree. K. to 87.degree. K. or a temperature not greater than 10.degree. K.;
• and
• measuring a luminous intensity of luminescence radiation emitted from said thin film, and the manufacturing process proceeds to a succeeding step only if the maximum luminous intensity, in a range of 0.8.about.0.9 eV, of a spectrum of said luminescence is higher than that in a range of 0.9.about.1.0 eV.