Back to results
US 5,399,425 AGranted
Metallized polymers
AssigneeE. I. Du Pont de Nemours and Company
InventorRobert R. Burch
Life of this patent
Estimating the term…
Abstract
A method is disclosed for metallizing polymers comprising generating anionic sites on the structures, contacting same with the cation of the metal and then reducing the metal cation to metal at the anionic sites or treating the metal cations to form a semiconductor. The metallized polymers are useful as electrical conductors or semiconductors.
Claims20
A metallized polymer structure comprising
- (A) a polymer having at least one repeating unit --NHRCO--, wherein
- R is R.sup.3 or R.sup.1 NHCOR.sup.2, R.sup.1 and R.sup.3, individually, are m-phenylene, p-phenylene, 3,3'-biphenylene, 3,4-biphenylene, 4,4'-biphenylene or 4,4'-diphenylene ether,
- R.sup.2 is R.sup.1 or --(CH.sub.2).sub.x --, and
- x is 1 to 10;
- and
- (B) a metal selected from the group consisting of any of Groups 8 through 12 of the Periodic Table of the Elements, chromium, lead and indium, said metal dispersed in a surface of the polymer up to about 500 nanometers.
3 more elements
A metallized polymer structure comprising
- (A) a polymer having at least one repeating unit --NHRCO--, wherein
- R is R.sup.3 or R.sup.1 NHCOR.sup.2, R.sup.1 and R.sup.3, individually, are m-phenylene, p-phenylene, 3,3'-biphenylene, 3,4-biphenylene, 4,4'-biphenylene or 4,4'-diphenylene ether,
- R.sup.2 is R.sup.1 or --(CH.sub.2).sub.x --, and
- x is 1 to 10;
- (B) a first metal selected from the group consisting of any of Groups 8 through 12 of the Periodic Table of the Elements, chromium, lead and indium, said metal dispersed in [the] a surface of the polymer up to about 500 nanometers;
- and
- (C) at least one coating containing one or more metals selected from the group consisting of any of Groups 8 through 12 of the Periodic Table of the Elements, chromium, lead and indium, said coating layered over said first metal, and said coating having
- (a) an Adherence Factor of at least about 70%;
- and
- (b) a Conductivity Value of greater than 0.1 reciprocal ohm per meter in at least about 70% of the polymer.
7 more elements
A semiconductor imbibed polymer structure comprising
- (A) a polymer having at least one repeating unit --NHRCO--, wherein
- R is R.sup.3 or R.sup.1 NHCOR.sup.2, R.sup.1 and R.sup.3, individually, are m-phenylene, p-phenylene, 3,3'-biphenylene, 3,4-biphenylene, 4,4'-biphenylene or 4,4'-diphenylene ether,
- R.sup.2 is R.sup.1 or --(CH.sub.2).sub.x --, and
- x is 1 to 10;
- (B) at least one metal selected from the group consisting of cadmium, zinc, iron, cobalt, lead, nickel, germanium, tin, gallium, aluminum, said metal treated with a compound that forms a semiconductor therewith;
- said treated metal penetrating into the polymer to a depth of up to about 500 nanometers.
3 more elements
Dependencies are inferred from the claim text.