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US 5,399,387 AGranted
Plasma CVD of silicon nitride thin films on large area glass substrates at high deposition rates
AssigneeApplied Materials, Inc.
InventorsKam S. Law, Robert Robertson, Pamela Lou, Marc M. Kollrack, Angela Lee, Dan Maydan
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Abstract
High quality silicon nitride thin films can be deposited by plasma CVD onto large area glass substrates at high deposition rates by adjusting the spacing between the gas inlet manifold and substrate, maintaining the temperature at about 300.degree.-350.degree. C., and a pressure of at least 0.8 Torr. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers which are part of a single vacuum system.
Claims7
A plasma assisted chemical vapor deposition process comprising
- depositing a dielectric silicon nitride film from a plasma of a precursor gas comprising silane and ammonia onto a single substrate at a temperature of below about 450.degree. C. and a pressure of at least about 0.8 Torr in a vacuum chamber wherein the spacing between the gas inlet manifold and the substrate is adjusted so that the silicon nitride deposition rate is maximized.
Dependencies are inferred from the claim text.