Low-pressure chemical vapor deposition process for depositing high-density, highly-conformal titanium nitride films of low bulk resistivity
AssigneeMicron Semiconductor, Inc.
InventorGurtej S. Sandhu
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Abstract
A low-pressure chemical vapor deposition process is disclosed for creating high-density, highly-conformal titanium nitride films which have very low bulk resistivity, and which provide excellent step coverage. The process utilizes a metal-organic compound, tetrakis-dialkylamido-titanium Ti(NR.sub.2).sub.4, as the primary precursor, in combination with a halogen gas selected from the group consisting of fluorine, chlorine and bromine. The wafer is heated to a temperature within a range of 200.degree.-600.degree. C. The halogen gas is admitted to the depositiion chamber before the introduction of the primary precursor compound or simultaneously with the primary precursor compound.
Claims20
A chemical vapor deposition process for depositing a titanium nitride film on the surface of a substrate, said process comprising the steps of:
- (a) disposing the substrate within a chemical vapor deposition chamber which has been evacuated to a pressure within a range of 0.1-100 torr;
- (b) introducing an unactivated halogen gas into said chamber;
- (c) heating the substrate to a temperature within a range of 200.degree.-600.degree. C.;
- (d) introducing a vaporized organometallic compound into said chamber after the heating step is accomplished;
- and
- (e) maintaining the substrate within the chamber until a layer of titanium nitride having a desired thickness has deposited on said surface.
A chemical vapor deposition process for depositing a titanium nitride film on the surface of a substrate, said process comprising the steps of:
- (a) disposing the substrate within a chemical vapor deposition chamber which has been evacuated to a pressure within a range of 0.1-100 torr;
- (b) introducing an unactivated halogen gas selected from the group consisting of fluorine, chlorine and bromine into said chamber;
- (c) heating the substrate to a temperature within a range of 200.degree.-600.degree. C.;
- (d) introducing vaporized tetrakis-dialkylamido-titanium into said chamber after the heating step is accomplished;
- and
- (e) maintaining the substrate within the chamber until a layer of titanium nitride having a desired thickness has deposited on said surface.
Dependencies are inferred from the claim text.