US 5,399,254 A · Apparatus for plasma treatment

Abstract

The invention concerns an apparatus for the plasma treatment of substrates in a plasma discharge excited by a high frequency between two electrodes 3, 8 to which power is supplied by a high frequency source, where the first electrode is configured as a hollow electrode 3 and the second one as an electrode 8 holding a substrate 7 and situated upstream of the hollow chamber 10 of the first electrode which it also passes. The hollow electrode is enclosed by a dark space shield and has an edge pointing in direction of the second electrode and also has projection located between the edge. These projections are on the same potential as the second electrode. The radio frequency power is thus decoupled from the substrate bias voltage (selfbias) and the distance between the first and the second electrode can be changed.

Claims9

Dependent claims

Apparatus for the plasma treatment of substrates comprising

a first electrode configured as a hollow electrode comprising a surrounding edge and a plurality of projections therein at like potential extending parallel to said edge,
a high frequency RF power source connected to said first electrode,
a second electrode configured as a substrate carrier situated opposite said first electrode and facing said projections therein,
a dark space shield surrounding said first electrode and having a surrounding edge about said surrounding edge of said first electrode, and
a removable insert extending said surrounding edge of said dark space shield beyond said surrounding edge of said first electrode toward said second electrode, said removable insert being at common potential with said dark space shield.

2 more elements

Dependencies are inferred from the claim text.

Apparatus for plasma treatment

Life of this patent

Apparatus for plasma treatment

Life of this patent

Abstract

Claims9