Method for p-type doping of semiconductor structures formed of group II and group VI elements
AssigneeTexas Instruments Incorporated
InventorHung-Dah Shih
Life of this patent
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Abstract
A method and apparatus (10) for forming a p-doped layer (68, 80, 92) of Group II and Group VI elements by molecular beam epitaxial process in which a nitrogen dopant is introduced as the layer (68, 80, 92) is being grown. In one embodiment, molecular nitrogen is passed through a plasma generator (46) for converting it to activated nitrogen, and the activated nitrogen is conducted through an elongated guide tube (50) toward the substrate (66) upon which a Group II-Group VI layer (68, 80, 92) is being grown. In one embodiment, an n-type dopant source (72) is also provided, the apparatus (10) being operable for forming electrical devices (86, 88) having successive layers (78, 80, 90, 92, 94) of differing electrical characteristics.
Claims14
A method for forming a p-doped semiconductor layer, comprising the steps of:
- providing a crystalline substrate;
- supporting the substrate within a chamber;
- epitaxially growing on the substrate a semiconductor layer consisting essentially of Group II and Group VI materials with mercury included in the Group II material, while introducing activated nitrogen into the chamber to effect p-type doping of the semiconductor layer.
A method for forming a semiconductor device, comprising the steps of:
- providing a crystalline substrate;
- supporting the substrate within a chamber;
- epitaxially growing a first, n-doped semiconductor layer on the substrate;
- epitaxially growing a second semiconductor layer on the first layer, the second layer consisting of at least one Group II element and including mercury and at least one Group VI element selected from the group consisting of tellurium and selenium;
- and
- introducing activated nitrogen into the chamber, during the step of epitaxially growing the second layer and effect p-type doping of the second layer.
A method for epitaxially growing a p-type semi-conductor layer consisting essentially of Group II and Group VI materials, comprising the steps of:
- providing a crystalline substrate;
- supporting the substrate within a molecular beam epitaxy chamber;
- growing a semiconductor layer on the substrate by molecular beam epitaxy, by introducing flux into the chamber consisting essentially of at least one Group II element and including mercury and at least one Group VI element selected from the group consisting of tellurium and selenium;
- and
- introducing activated nitrogen into the chamber, during the step of epitaxially growing a semiconductor layer to effect in-situ p-type doping of the semiconductor layer.
Dependencies are inferred from the claim text.