Apparatus for growing hollow crystalline bodies from the melt
AssigneeSaphikon, Inc.
InventorsJohn W. Locher, Joseph E. Madsen
Life of this patent
Estimating the term…
Abstract
A single crystal dome is formed from a surface of revolution and grown from a liquid material on a linear die surface wettable by the molten material. A seed crystal is supported in a position spaced from an axis of revolution which lies in the plane of the wettable surface, and the seed crystal is rotated around the axis of revolution to generate a curved surface having a predetermined radius of curvature. The seed crystal is supported in a predetermined orientation of one of its axes with respect to the wetted surface of commencement of growth.
Claims7
An Apparatus for growing a single crystal sapphire dome of required radius of curvature, wherein said dome is formed from a surface of revolution which is grown from a liquid material, said apparatus comprising a supply of said molten material, a curved linear die surface wettable by said molten material, an axis of revolution, means for supporting a seed crystal in a position spaced from said axis of revolution by an amount equal to said radius, means for rotating said seed crystal around said axis of revolution to generate a curved surface having said radius of curvature, the improvement wherein the axis of revolution of said seed rotating means lies in a horizontal plane coincident with said wetted surface and said seed crystal is in the form of a curved shape which extends through at least 120.degree. of arc.
Method for growing a single crystal sapphire dome having a surface of revolution of required radius of curvature and wherein said dome is grown from a liquid material, comprising supplying said molten material to a curved linear die surface wettable by said molten material, supporting a seed crystal in contact with molten material on said wetted surface and in a position spaced from an axis of revolution lying in a horizontal plane coincident with said wetted surface, said seed crystal extending through at least 120.degree. of arc, rotating said seed crystal around said axis of revolution to generate a curved surface having said required radius of curvature.
Dependencies are inferred from the claim text.