Ceramic package for housing a semiconductor device

A glass sealing type ceramic package for housing a semiconductor device, comprising:

• a ceramic substrate having a cavity with said semiconductor device disposed therein;
• a metallized layer on a surface of said ceramic substrate about a periphery of said cavity;
• said metallized layer on said surface defining an outer ceramic periphery and covering no more than a portion of said surface:
• a first glass layer on said metallized layer and said outer ceramic periphery;
• a lead frame, having a plurality of inwardly facing leads, disposed on said first glass layer;
• first means for connecting a portion of said leads directly to said semiconductor device:
• second means for connecting a remainder of said leads to said semiconductor device through said metallized layer;
• a ceramic cap having a second glass layer disposed about a periphery of said ceramic cap:
• said semiconductor device being hermetically sealed in said cavity by fusion of said first and second glass layers to each other:
• and
• said portion being 70-90% of a total number of said leads.

A glass sealing type ceramic package for housing a semiconductor device, comprising:

• a ceramic substrate having a cavity with said semiconductor device disposed therein;
• a metallized layer on a surface of said ceramic substrate about a periphery of said cavity;
• said metallized layer on said surface defining an outer ceramic periphery and covering no more than a portion of said surface;
• said metallized layer divided into a plurality of independent conductive sectors;
• a first glass layer on said metallized layer and said outer ceramic periphery;
• a lead frame, having a plurality of inwardly facing leads, disposed on said first glass layer;
• first means for connecting a portion of said leads directly to said semiconductor device;
• second means for connecting a remainder of said leads to said semiconductor device through at least one said independent conductive sectors;
• a ceramic cap having a second glass layer disposed about a periphery of said ceramic cap;
• and
• said semiconductor device is hermetically sealed in said cavity by fusion of said first and second glass layers to each other.