Semiconductor sensor with plural gate electrodes
AssigneeHonda Giken Kogyo Kabushiki Kaisha
InventorsSatoshi Hiyama, Katuhiko Takebe, Katsuki Ichinose
Life of this patent
Estimating the term…
Abstract
A semiconductor sensor has a plurality of field-effect transistors disposed on a semiconductor substrate at spaced intervals. The field-effect transistors have respective drains electrically connected parallel to each other, respective sources electrically connected parallel to each other, and gates electrically connected parallel to each other. While a gate bias voltage is being applied to each of the field-effect transistors, a stress applied to the semiconductor substrate is detected based on a change in a combined output of the field-effect transistors. A single comb-shaped field-effect transistor or a single planar type field-effect transistor may be employed instead of the plurality of field-effect transistors.
Claims11
A semiconductor sensor comprising:
- a semiconductor substrate;
- an active region formed on said semiconductor substrate;
- a single field effect transistor formed in said active region;
- said single field effect transistor including a plurality of gate electrodes connected parallel to each other, a plurality of source electrodes connected parallel to each other, and a plurality of drain electrodes connected parallel to each other;
- means for applying a gate bias to said gate electrodes;
- and
- means for detecting stress applied to said single field effect transistor based on a change in output of said drain electrodes.
A semiconductor sensor comprising:
- a semiconductor substrate having a flexible region that is flexible under a stress applied thereto, said flexible region having a length L from an end of a fixed region to a center of gravity;
- a sensing device being positioned within a range on said substrate which is approximately 2/3 of said length L from an end of said flexible region;
- and
- means for detecting a stress applied to said semiconductor substrate based on an output of said sensing device.
A semiconductor sensor comprising:
- a semiconductor substrate;
- a linear array of field effect transistors disposed on said semiconductor substrate along a direction, said field-effect transistors having respective drains electrically connected parallel to each other, respective sources electrically connected parallel to each other, and gates electrically connected parallel to each other;
- means for applying a gate bias voltage to each of said field effect transistors;
- and
- means for detecting a stress applied to said semiconductor substrate based on a change in a combined output of said field-effect transistors.
Dependencies are inferred from the claim text.