US 5,397,907 AGranted

Field effect transistor and fabricating method thereof

AssigneeSamsung Electronics Co., Ltd.

InventorYong H. Lee

Life of this patent

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Abstract

A MESFET which includes a semi-insulating substrate, e.g., a GaAs substrate, an insulating layer formed on a portion of the upper surface of the substrate, a first semiconductor layer formed on the upper surface of the substrate adjacent to opposite sides of the insulating layer, the first semiconductor layer having sidewalls defining a void therein, a nitride layer formed on a portion of the upper surface of the insulating layer, an oxide layer formed on the nitride layer, a second semiconductor layer formed on the sidewalls of the first semiconductor layer and in covering relationship to the void, a gate electrode formed on at least a portion of the upper surface of the second semiconductor layer, and, source and drain electrodes formed on the upper surface of the first semiconductor layer, on opposite sides of the gate electrode.

Claims18

Dependent claims

A MESFET, comprising:

a semi-insulating substrate;
an insulating layer formed on a portion of a major surface of said semi-insulating substrate;
a first semiconductor layer formed on said major surface of said semi-insulating substrate adjacent to opposite sides of said insulating layer, said first semiconductor layer having inversely sloped sidewalls defining a void therein, said sidewalls extending from an upper surface of said first semiconductor layer to an upper surface of said insulating layer;
a nitride layer formed on a portion of said upper surface of said insulating layer;
an oxide layer formed on said nitride layer;
a second semiconductor layer formed on said sidewalls of said first semiconductor layer and in covering relationship to said void;
a gate electrode formed on at least a portion of a surface of said second semiconductor layer;
and,
source and drain electrodes formed on said upper surface of said first semiconductor layer on opposite sides of said gate electrode.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 08/223,781Filed 6 Apr 1994 · division
Priority: 18 Mar 1993
Granted: 14 Mar 1995
Term ends: Not estimatedThe source records don’t support an estimate.

Classification13 codes

H10D 30/0612
Of FETs having Schottky gates: of lateral single-gate Schottky FETs
H10D 30/87
FETs having rectifying junction gate electrodes: fETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
H10D 62/115
Isolations within a component, i.e. internal isolations: dielectric isolations, e.g. air gaps
H10D 62/221
Channel regions of field-effect devices: of FETs