US 5,397,904 A · Transistor microstructure

Abstract

A method for isolating transistors and a microstructure for providing isolation for transistors includes a beam located on a substrate. The beam is formed from the same material as the substrate, preferably single crystal silicon, and is released so as to be suspended in the cavity and spaced apart from the substrate. The beam is supported in the cavity by a cantilever structure or by spaced pedestals, or both. One or more transistors are fabricated in the beam, and are thus isolated from the substrate and may be isolated from each other if desired. Contact beams may also be provided to contact the transistor electrodes for interconnection of adjacent transistors or connection of the transistors to electrical circuitry on the substrate. The contact beams also provide mechanical support for the beams. Multiple beams in side-by-side arrays or stacked arrays may be provided.

Claims46

Dependent claims

A transistor microstructure, comprising:

a substrate;
a beam electrically isolated from said substrate;
means supporting said beam on said substrate;
and
a transistor including a gate carried by said beam and a source and a drain in said beam, adjacent said gate.

2 more elements

Dependencies are inferred from the claim text.

Transistor microstructure

Life of this patent

Transistor microstructure

Life of this patent

Abstract

Claims46