Loading patent…
AssigneeFrance Telecom Etablissement Autonome de Droit Public
InventorsChristophe Minot, Marcel Bensoussan
Estimating the term…
Guided-wave photoreceptor based on quantum wells made of semiconductor materials, particularly for coherent communications system with polarization diversity. This photoreceptor has at least one pair composed of a first photodetector (76) and a second photodetector (78). At least the first photodetector is formed on a semiconductor substrate (94) and has a multilayer ribbon with multiple quantum wells made of semiconductor material (100); this multilayer ribbon is provided to guide an incident light; the first photodetector is capable of absorbing the transverse magnetic component of that light, whose electrical field has a component perpendicular to the plane of the multilayer; the transverse electrical component of that light is virtually not absorbed in the first photodetector; the second photodetector is provided to absorb this transverse electrical component.
A photoreceptor comprising a first photodetector (10, 28, 34, 76) and a second photodetector (22, 30, 36, 78), said second photodetector being placed after said first photodetector, wherein the first photodetector is formed on a semiconductor substrate (12, 26, 44, 66, 94) and has a multilayer ribbon with multiple quantum wells made of semiconductor materials (14, 52, 84, 100), said multilayer ribbon is provided to guide an incident light (16) and said first photodetector is capable of preferentially absorbing the transverse magnetic component (TM) of that light, whose electrical field has a component perpendicular to the plane of the multilayer, a transverse electrical component (TE) of said incident light is not absorbed in the first photodetector, said second photodetector being provided to absorb said transverse electrical component.
A photoreceptor comprising a first photodetector (10, 28, 34, 76) and a second photodetector (22, 30, 36, 78), said second photodetector being placed after said first photodetector, wherein the first photodetector is formed on a semiconductor substrate (12, 26, 44, 66, 94) and has a multilayer ribbon with multiple quantum wells made of semiconductor materials (14, 52, 84, 100), said multilayer ribbon being provided to guide an incident light (16) and to absorb said incident light by means of an intra-band transition between two sub-bands, said first photodetector being capable of preferentially absorbing the transverse magnetic component (TM) of said incident light, whose electrical field has a component perpendicular to the plane of the multilayer, the transverse electrical component (TE) of said light is not absorbed in the first photodetector, said second photodetector being provided to absorb said transverse electrical component.
Dependencies are inferred from the claim text.