Method of making a semiconductor device

A method of making a semiconductor device, comprising the steps of:

• forming a first insulator having a uniform thickness on a semiconductor substrate;
• forming a first conductor having a uniform thickness on the first insulator and then patterning the first conductor to form a plurality of first wires;
• forming a second insulator on the entire surface and then removing a portion of the second insulator disposed on the surface of a selected one of said first wires, to form a contact hole;
• forming a second conductor on the entire exposed surface and then patterning the second conductor to form an interconnection wire in the contact hole, wherein the width of the interconnection wire is wider than that of the contact hole and narrower than that of the selected first wire;
• forming a third insulator having a uniform thickness and having crevices;
• after said third insulator forming step, forming a fourth insulator having a smoothing surface;
• before said fourth insulator forming step, forming a fifth insulator on surfaces of the third insulator;
• subjecting the fifth insulator to an anisotropic dry etching process to form a side wall insulator in the crevices of the third insulator, thereby enabling the crevices to be filled and enabling the heights of step-shaped portions of the third insulator to be reduced;.
• etching back uniformly the third insulator and the fourth insulator, until the surface of the interconnection wire is exposed;
• and
• forming a third conductor having a uniform thickness on the entire exposed surface and then patterning the third conductor to form a second wire to be connected to the selected first wire through the interconnection wire.