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US 5,397,740 AGranted
Method of making an optical semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsYukio Toyoda, Shinichi Wakabayashi, Hitomaro Tougou
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Abstract
First and second junctions are set so as to control electric fields applied to an active layer, independent from each other, and the electric field applied by the first junction controls exciting conditions while the electric field applied by the second junction drives the active layer so as to simplify a drive circuit for an optical semiconductor device.
Claims1
A method of producing an optical semiconductor device comprising the steps:
- growing an n-type buffer layer on an n-type substrate;
- growing an n-type clad layer, a quantum well layer, a p-type clad layer and a p-type cap layer in the mentioned order on said n-type buffer layer and etching to form a ridge;
- growing an undoped layer on said n-type buffer layer so as to be disposed on opposite sides of said ridge;
- growing an n-type layer and an n-type cap layer in the mentioned order on said undoped layer on one side of said ridge;
- growing a p-type layer and a p-type cap layer in the mentioned order on said undoped layer on the other side of said ridge;
- respectively providing first junction electrodes on said p-type cap layer at the top of said ridge and the bottom surface of said substrate, and
- respectively providing second junction electrodes on said p-type cap layer and said n-type cap layer on both sides of said ridge.
4 more elements
Dependencies are inferred from the claim text.