Process for formation of heteroepitaxy
AssigneeFujitsu Limited
InventorNorimitsu Takagi
Life of this patent
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Abstract
A process of the formation of heteroepitaxy including heating a silicon substrate in gas ambience including one of a hydride of a IIIB group element and an organic substance of a IIIB group element, having the IIIB group element remain on the surface of the silicon substrate, and growing a GaAs film on a surface of the silicon substrate after the heat processing. Particles remaining on an inner wall or the like of a film forming apparatus are prevented from reaching the surface, and a IIIB group element remains on the surface after preprocessing. Such a GaAs film formed on the surface includes less unevenness and crystal defects.
Claims7
A process of the formation of heteroepitaxy comprising the steps of:
- heating a silicon substrate in a IIIB group element gas including one of trimethylgallium (TMG) gas and triethylgallium (TEG) gas with a higher temperature than a depositing temperature of a single crystal GaAs layer and having the IIIB group element remain on a surface of the silicon substrate;
- forming a GaAs initial layer on the silicon substrate while heating the silicon substrate with a lower temperature than the depositing temperature;
- and
- forming a single crystal GaAs layer on the silicon substrate while heating the silicon substrate with the depositing temperature.
A process of the formation of heteroepitaxy comprising the steps of:
- heating a silicon substrate in a IIIB group element including diborane (B.sub.2 H.sub.6) with a higher temperature than a depositing temperature of a single crystal GaAs layer and having the IIIB group element remain on a surface of the silicon substrate;
- forming a GaAs initial layer on the silicon substrate while heating the silicon substrate with a lower temperature than the depositing temperature;
- and
- forming a single crystal GaAs layer on the silicon substrate while heating the silicon substrate with the depositing temperature.
Dependencies are inferred from the claim text.