Method of manufacturing a compound semiconductor
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKazuhiro Okawa, Shigeo Hayashi, Takeshi Karasawa, Tsuneo Mitsuyu
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Abstract
A compound semiconductor thin film is grown on a compound semiconductor surface, which is cleaned by irradiating the surface with gas containing at least hydrogen molecules and by efficiently removing contaminant on the surface at low temperature. A beam containing at least hydrogen molecules is irradiated from a plasma generating room attached to a MBE chamber, and cleans the surface of a compound semiconductor at low temperature. By an additional mechanism attached to the MBE chamber, a compound semiconductor thin film of high quality is grown on the cleaned surface of the compound semiconductor.
Claims10
A method of cleaning a compound semiconductor comprising irradiating a surface of a compound semiconductor containing at least one bivalent element and at least one VI group element with a gas containing hydrogen gas and at least one gas selected from the group consisting of methane gas and ethylene gas while maintaining the temperature of the compound semiconductor surface below a growth temperature of said compound semiconductor and between 200.degree. C. and 360.degree. C.
A method for manufacturing a compound semiconductor comprising the steps of:
- cleaning a surface of a compound semiconductor containing at least one bivalent element and at least one VI group element by irradiating said surface with a gas containing hydrogen gas and at least one gas selected from the group consisting of methane gas and ethylene gas while maintaining the temperature of the compound semiconductor surface below a growth temperature of said compound semiconductor and between 200.degree. and 360.degree. C.;
- and
- growing and laminating the compound semiconductor on the cleaned surface.
Dependencies are inferred from the claim text.