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US 5,396,461 AGranted
Non-volatile dynamic random access memory device
AssigneeSharp Kabushiki Kaisha
InventorKatsumi Fukumoto
Life of this patent
Estimating the term…
Abstract
A non-volatile dynamic random access memory device which includes a memory section including at least non-volatile memory cells for a non-volatile mode operation which includes a recall operation and a store operation; and a rewriting device for rewriting data when the power is turned on. The data is identical with data stored in the memory section.
Claims11
A non-volatile dynamic random access memory device, comprising:
- a memory section including non-volatile memory cells for a non-volatile mode operation which includes a recall operation and a store operation, and including volatile memory cells for a volatile mode operation;
- and
- rewriting means for rewriting data when power is turned on, the data being identical with data stored in the memory section, the rewriting means comprising:
- power-on detecting means for detecting that the power is turned on and for outputting an operation mode switching signal, for putting the non-volatile dynamic random access memory into a non-volatile operation mode by the switching signal, and
- operation control means for performing a recall operation for a specified area of the memory cells in response to the operation mode switching signal and subsequently performing a store operation for the specified area of the memory cells.
2 more elements
A non-volatile dynamic random access memory device, comprising:
- a memory section including only non-volatile memory cells for a non-volatile mode operation which includes a recall operation and a store operation;
- and
- rewriting means for rewriting data when power is turned on, the data being identical with data stored in the memory section,
- wherein the memory section is formed of a ferroelectric material, the non-volatile dynamic random access memory device further comprising:
- power-on detecting means for detecting that the power is turned on and for outputting an operation control signal, for controlling the non-volatile dynamic random access memory device to perform a refreshing operation for all the memory cells by the operation control signal;
- and
- polarity rewriting means for rewriting a polarity of the ferroelectric material.
4 more elements
A non-volatile dynamic random access memory device, comprising:
- a memory section including at least non-volatile memory cells for a non-volatile mode operation which includes a recall operation and a store operation;
- and
- rewriting means for rewriting data when power is turned on, the data being identical with data stored in the memory section;
- wherein the non-volatile memory section is formed of a ferroelectric material, the non-volatile dynamic random access memory device further comprising:
- power-on detecting means for detecting that the power is turned on and for outputting an operation control signal, for controlling the non-volatile dynamic random access memory device to perform a reading operation for all the memory cells by the operation control signal;
- and
- polarity rewriting means for rewriting a polarity of the ferroelectric material.
4 more elements
Dependencies are inferred from the claim text.