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US 5,396,455 AGranted
Magnetic non-volatile random access memory
AssigneeInternational Business Machines Corporation
InventorsMichael J. Brady, Richard J. Gambino, Lia Krusin-Elbaum, Ralph R. Ruf
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Abstract
A non-volatile random access memory is described incorporating a plurality of memory cells, each memory cell having a Hall effect device including amorphous magnetic material and a switch for directing current through the flail effect device. An array of memory cells are interconnected by word lines, current lines, and bit lines. The invention overcomes the problem of a rugged non-volatile random access memory with long term reliability.
Claims11
A non-volatile random access memory comprising:
- a two dimensional array of Hall effect devices arranged in a plurality of rows and columns,
- each said Hall effect device having first and second spaced apart terminals for connecting in series with a current line,
- each said Hall effect device having third and fourth spaced apart terminals for connecting in series with a bit line,
- each Hall effect device in a respective column connected to a word line, each Hall effect device in a respective row connected in a respective current line and a respective bit line,
- the connection of each Hall effect device in a respective current line is through a switch, the word line is coupled to the control input of said switch,
- the magnetic state of the Hall effect device is sensed by measuring the voltage on the bit line when a current is passed through the Hall effect device by activating the current line and turning on the switch by a voltage on the word line.
3 more elements
Dependencies are inferred from the claim text.