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US 5,396,397 AGranted
Field control and stability enhancement in multi-layer, 3-dimensional structures
AssigneeHughes Aircraft Company
InventorsRobert F. McClanahan, Robert D. Washburn
Life of this patent
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Abstract
Unitized multilayer circuit structures including basic substrate insulating layers and dielectric field control layers having dielectric constants different from the dielectric constant of the basic substrate insulating layers.
Claims4
A multiple layer circuit structure comprising:
- a plurality of electrically insulating layers of a first dielectric constant arranged in a layered stack;
- a first high dielectric field control layer disposed on the top of said stack, said first high dielectric field control layer having a dielectric constant that is greater than said first dielectric constant and having a region without any parallel plate capacitors formed thereon;
- a second high dielectric field control layer disposed on the bottom of said stack, said second high dielectric field control layer, and having a dielectric constant that is greater said first dielectric constant and having a region without any parallel plate capacitors formed thereon.
A multilayer circuit structure comprising:
- a plurality of electrically insulating layers of a first dielectric constant;
- and
- a plurality of low dielectric field control layers having a dielectric constant that is less than said first dielectric constant and respectively having respective regions without parallel plate capacitors formed thereon;
- and
- a plurality of high dielectric field control layers having a dielectric constant that is greater than said first dielectric constant and respectively having respective regions without parallel plate capacitors formed thereon;
- said low dielectric field control layers and said high dielectric field control layers being symmetrically intermixed with said electrically insulating layers and forming a layered stack therewith wherein said low dielectric field control layers are symmetrically located about a center of said layered stack and said high dielectric field control layers are symmetrically located about said center.
3 more elements
Dependencies are inferred from the claim text.