Electrically programmable internal power voltage generating circuit

An internal power voltage generating circuit of a semiconductor memory device, said internal power voltage generating circuit comprising:

• reference voltage generator means for generating a reference voltage;
• driving circuit means for generating an internal power voltage in dependence upon one of an external power voltage and said reference voltage;
• differential amplifier means for controlling said driving circuit means in response to comparisons of a selected voltage and said internal power voltage;
• voltage sensing means having a pad terminal, for responding to a sensed voltage by sensing a voltage applied to said pad terminal and generating one of a logic high output and logic low output in dependence on the sensed voltage;
• and
• reference voltage controlling means for providing one of said reference voltage and said external power voltage to said differential amplifier means as said selected voltage in response to a received one of said logic high output and said logic low output.

An internal power voltage generating circuit of a semiconductor memory device, said internal power voltage generating circuit comprising:

• internal power voltage generator means for controlling amplitude of an internal power voltage in response to a selected voltage;
• voltage sensing means for generating voltage sensed signals indicative of a voltage at a voltage sensing input terminal;
• and
• reference voltage controlling means for providing one of a reference voltage and a second voltage as said selected voltage in response to said voltage sensed signals.

A semiconductor device, comprising:

• voltage sensing means for generating voltage sensed signals in dependence upon amplitude of a received voltage;
• reference voltage controlling means for providing a reference potential by selecting one of a reference voltage and an external voltage in dependence upon said sensed voltage signals;
• and
• means for controlling amplitude of an internal voltage of the semiconductor device in dependence upon amplitude of said reference potential and variation in said amplitude of said internal voltage.

A voltage generating circuit for a semiconductor memory device, comprising:

• a first terminal for providing an external voltage;
• an output terminal;
• an input terminal for receiving an applied voltage;
• voltage sensor means for generating a sensed voltage signal by sensing the applied voltage received by said input terminal;
• reference voltage generator means for generating a reference voltage;
• internal voltage generator means for generating a internal voltage at said output terminal, said internal voltage having an amplitude substantially equal to the amplitude of one of the external voltage and the reference voltage in dependence upon said sensed voltage signal;
• and
• reference voltage controller means for controlling said internal voltage generator means to generate said internal voltage by regulating transmission of one of said reference voltage and said external voltage to said internal voltage generator means in dependence upon logic states of said sensed voltage signal, said reference voltage controller means comprising:
• a transmission gate for enabling transmission of said reference voltage to said internal voltage generator means in dependence upon said sensed voltage signal, said transmission gate having a control electrode coupled to receive said sensed voltage signal and a principal electrically conducting channel interposed between said reference voltage generator means and said internal voltage generator means;
• and
• a pull-up transistor for alternatively enabling transmission of said reference voltage and said external power voltage to said internal voltage generator means in dependence upon logic states of said sensed voltage signal, said pull-up transistor having a first electrode of a principal electrically conducting channel connected to said first terminal, a second electrode of said principal electrically conducting channel connected to said internal voltage generator means and a control electrode coupled to receive said sensed voltage signal.

A voltage generating circuit for a semiconductor memory device, comprising:

• means for receiving an external voltage;
• voltage sensor means for generating a sensed voltage signal by sensing an applied voltage;
• reference voltage generator means for generating a reference voltage;
• internal voltage generator means for generating an internal voltage at an output terminal;
• and
• reference voltage controller means for controlling generation of said internal voltage having an amplitude substantially equal to the amplitude of one said external voltage and said external voltage in dependence upon said sensed voltage signal, said reference voltage controller means comprising:
• gate means disposed between said reference voltage generator means and said internal voltage generator means, for enabling transmission of said reference voltage to said internal voltage generator means in dependence upon said sensed voltage signal;
• and
• transistor means for alternatively enabling transmission of said reference voltage and said external power voltage to said internal voltage generator means in dependence upon said sensed voltage signal.