MOS type semiconductor device having a high ON current/OFF current ratio
AssigneeNEC Corporation
InventorHiroshi Kitajima
Life of this patent
Estimating the term…
Abstract
A MOS type semiconductor device includes a thin-film semiconductor, a gate oxide film, and a gate. The thin-film semiconductor has a drain region, a source region, and a channel region arranged between these two regions. The gate oxide film is formed on the thin-film semiconductor. The gate is formed in correspondence with the channel region via the gate oxide film. The thin-film semiconductor is formed such that the film thickness of the drain region and the source region is made smaller than the film thickness of the channel region.
Claims6
A MOS type semiconductor device comprising:
- a first thin-film semiconductor having a drain region, a source region, and a channel region arranged between said drain and source region;
- a gate oxide film formed adjacent to said thin-film semiconductor;
- a gate formed in correspondence with said channel region via said gate oxide film;
- and
- a region, where no impurity is ion-implanted, formed at least between and drain region and said channel region corresponding to an end portion of said gate along a conductive channel direction,
- wherein said first thin-film semiconductor is formed such that a film thickness of said drain region, and said source region is made smaller than a film thickness of said channel region and is formed on a silicon substrate via an insulating film.
A MOS type semiconductor device comprising:
- a first thin-film semiconductor having a drain region, a source region, and a channel region arranged between said drain region and said source region;
- a gate oxide film formed adjacent to said first thin-film semiconductor;
- a gate formed in correspondence with said channel region via said gate oxide film;
- and
- a region, where no impurity is ion-implanted, formed at least between said drain region and said channel region corresponding to an end portion of said gate along a conductive channel direction,
- wherein said first thin-film semiconductor is formed such that a film thickness of said drain region, and said source region is made smaller than a film thickness of said channel region and is a polycrystalline silicon thin film having a large grain size.
A MOS type semiconductor device comprising:
- thin-film semiconductor having a drain region, a source region, and a channel region arranged between said drain region and said source region;
- a gate oxide film formed adjacent to said first thin-film semiconductor;
- a gate formed in correspondence with said channel region via said gate oxide film;
- and
- a non-implanted region, where no impurity is ion-implanted in said thin film semiconductor, formed at least between said drain region and said channel region corresponding to an end portion of said gate along a conductive channel direction
- wherein a film thickness of said drain region, said source region, and said non-implanted region is made smaller than a film thickness of said channel region.
Dependencies are inferred from the claim text.