MOS component with a particular source and base structure
AssigneeSiemens Aktiengesellschaft
InventorHelmut Strack
Life of this patent
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Abstract
The source zone of an MOS component on a semiconductor body is disposed on the upper side of the gate electrode, and is in contact at an upper side of the source zone, with a source electrode. The base zone laterally adjoins the source zone and laterally adjoins the gate electrode at the drain zone. The minority charge carriers which flow from the semiconductor body to the cathode therefore flow directly to the source electrode through that part of the base zone disposed next to the gate electrode. An activation of a parasitic bipolar transistor, and thus the occurrence of so-called second breakdown, are thus avoided.
Claims4
An MOS component on a horizontally oriented semiconductor body, comprising:
- at least one drain zone in said horizontally oriented semiconductor body, at least one base zone on said horizontally oriented semiconductor body and at least one source zone;
- at least one gate electrode disposed, over said drain zone and electrically insulated from said source zone and said drain zone, said source zone being vertically stacked on and over said gate electrode;
- a portion of said base zone extending to laterally adjoin said source zone next to said gate electrode and being electrically insulated from said gate electrode;
- and
- a source electrode electrically contacted with said source zone on a surface facing away from said gate electrode.
Dependencies are inferred from the claim text.