Ion implantation system with protective plates of silicon in mass analyzing region

Abstract

An ion implantation system composed of an ion source to generate ion beam, a mass analyzing region to select ions having a predetermined mass from the ion beam, an acceleration region to accelerate the ion beam selected, scanning regions to respectively scan the ion beam toward the X and Y directions, and protecting means located along the exposed surface of the inner wall of the mass analyzing region. The protecting means may be formed of a thin silicon plate, and located to cover the inner wall of the mass analyzing region. Preferably, the silicon plate is located at an upper and a lower portion of an exposed surface of the inner wall of the mass analyzing region. The protecting means may be formed of plurality of silicon plates that can be disassembled.

Dependencies are inferred from the claim text.