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US 5,395,804 AGranted
Method for fabricating a thin film transistor
AssigneeSharp Kabushiki Kaisha
InventorTohru Ueda
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Abstract
A method for fabricating a thin film transistor formed on an insulator is disclosed. The method includes the steps of forming a non-single crystal silicon film on the insulator, forming a polysilicon film on the insulator by thermally treating the non-single crystal silicon film in an atmosphere of a gas including hydrogen halogenide, and forming a channel region in the polysilicon film.
Claims13
A method for fabricating a thin film transistor formed on an insulator, comprising the steps of:
- forming a non-single crystal silicon film on said insulator;
- forming a polysilicon film on said insulator by thermally treating said non-single crystal silicon film in an atmosphere of a gas mixture including a hydrogen halogenide gas and an oxidative gas;
- and
- forming a channel region in said polysilicon film.
1 more element
A method for fabricating a thin film transistor formed on an insulator, comprising the steps of:
- forming a non-single crystal silicon film on said insulator;
- forming a silicon oxide film on said non-single crystal silicon film;
- forming a polysilicon film on said insulator by thermally treating said non-single crystal silicon film in an atmosphere including a hydrogen halogenide;
- and
- forming a channel region in said polysilicon film.
2 more elements
Dependencies are inferred from the claim text.