Method of treating semiconductor materials

Abstract

A method for treatment of semiconductor material wherein the material is exposed to electromagnetic radiation having a frequency in the range of the resonance frequency in order to alter the relative positions of interstitial impurity ions and lattice nodes of the interstitial ions. The intensity of the electric field is selected to be proportional to the value of activation barrier potential of the impurity ions. The method is useful in providing accelerated diffusion of a doping impurity, activation of the ions of an implanted impurity, or in creation of metallic ohmic contacts at the surface of the semiconductor material without heating of the semiconductor material.

Dependencies are inferred from the claim text.