Methods for forming a transistor having an emitter with enhanced efficiency
AssigneeHarris Corporation
InventorsGeorge Bajor, Anthony L. Rivoli, Jack H. Linn
Life of this patent
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Abstract
Methods of forming a carbon containing, minority carrier barrier layer on the surface of a semiconductor, which methods may be used to form barriers between the emitter of a single crystal transistor and a polysilicon layer in electrical contact therewith, and thus transistors with an emitter with enhanced efficiency.
Claims25
A method of forming a carbon containing, minority carrier barrier layer between a first layer of single crystal silicon and a second layer of polycrystalline silicon though which electrical contact to the single crystal silicon layer may be made, the method comprising the steps of:
- a) providing a layer of single crystal silicon having an exposed surface area;
- b) oxidizing the exposed surface area of the single crystal silicon;
- c) plasma treating the oxidized surface to remove the oxide thereby forming a carbon containing polymer;
- d) subjecting the polymer to destructive distillation;
- and
- e) depositing a polycrystalline silicon layer over the residue of the destructive distillation,
- to thereby form a carbon containing, minority carrier barrier layer between the first layer of single crystal silicon and the second layer of polycrystalline silicon.
A method of forming a carbon containing barrier layer between the single crystal silicon emitter of a bipolar transistor and a polycrystalline silicon layer through which electrical contract with the emitter is made comprising the steps of:
- a) providing a single crystal silicon bipolar transistor having a base, collector and an emitter with an exposed surface area;
- b) oxidizing the exposed surface area of the emitter;
- c) plasma treating the oxidized surface of the emitter to remove the oxide thereby forming a carbon containing polymer thereon
- d) subjecting the polymer to destructive distillation;
- and
- e) depositing a polycrystalline silicon layer over the residue of the destructive distillation
- to thereby form a carbon containing barrier layer between the single crystal emitter and the polycrystalline silicon layer through which electrical contract with the emitter may be made.
A method of forming a bipolar transistor with an enhanced emitter efficiency comprising the steps of:
- a) providing a transistor with an exposed base surface;
- b) creating a carbon containing polymer on the exposed base surface;
- c) raising the temperature of the carbon containing polymer sufficiently to leave a carbon containing residue thereon;
- d) forming a layer of doped polycrystallne silicon on the carbon containing residue;
- and
- e) diffusing dopants from the polycrystalline silicon layer through the carbon containing residue into the base surface.
A method of forming a bipolar transistor with an enhanced emitter efficiency comprising the steps of:
- a) providing a transistor with an exposed emitter surface;
- b) creating a carbon containing polymer on the exposed emitter surface;
- c) raising the temperature of the carbon containing polymer sufficiently to leave a carbon containing residue thereon;
- and
- d) forming a layer of polycrystalline silicon on the carbon containing residue.
A method of providing a carbon containing, minority carrier barrier layer on the surface of a semiconductor comprising the steps of:
- a) providing a semiconductor surface;
- b) creating a carbon containing polymer on the surface;
- and
- c) heating the polymer sufficiently to provide a carbon containing residue
- whereby a carbon containing, minority carrier barrier layer is formed on the surface of the semiconductor.
Dependencies are inferred from the claim text.