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AssigneeKawasaki Jukogyo Kabushiki Kaisha
InventorsHitoshi Tabata, Osamu Murata, Junzo Fujioka, Shunichi Minakata, Shichio Kawai, Tomoji Kawai
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There is provided a process for producing a dielectric thin film of a perovskite oxide on a substrate by a vapor-deposition process which includes vaporizing the oxide and irradiating the oxide vapor or the substrate with a laser beam. There is also provided a pyroelectric type of sensor comprising: a MOS element including a drain electrode, a source electrode, a gate electrode and an Si semiconductor and a film of a ferroelectric or pyroelectric material formed on the drain electrode, the drain electrode being made of a material which exhibits a good ohmic contact with Si or SiO.sub.2 and has a lattice constant close to that of ferroelectric or pyroelectric material.
A process for producing a dielectric film of a perovskite oxide by vapor-depositing the oxide onto a substrate, comprising effecting the vapor deposition by irradiating the oxide as a target with a laser beam and irradiating another laser beam onto the substrate during vapor deposition.
A process for producing a dielectric film of a perovskite oxide by vapor-depositing the oxide onto a substrate, comprising effecting the vapor deposition by irradiating the oxide as a target with a laser beam and irradiating another laser beam to a vapor phase of said oxide, the laser beam to be irradiated to the vapor phase having a lower energy than the laser beam irradiated onto the target.
Dependencies are inferred from the claim text.