Multicolored electric field light emitting device with protruded electrode
AssigneeGoldstar Co., Ltd.
InventorJae S. Jeong
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Abstract
A semiconductor device and a method of making the same capable of simplifying the process of making and reducing the cost of making. In the method a first layer is formed which has a plurality of conductors at its edge portion. Thereafter, a second layer is formed on the first layer which is to be selectively etched to form a pattern. During the etching, current is detected from the conductors and the etching is stopped dependent on the current detected from the conductors. The semiconductor device includes a transparent electrode on a substrate the transparent electrode having protrusions which have a top surface. A first insulation layer exists between the protrusions. There is a color emitting layer on the top surfaces of the protrusions and the insulation layer.
Claims7
A semiconductor device comprising:
- (a) a transparent substrate;
- (b) a lower transparent electrode which has a plurality of protrusions at its edge portion each protrusion having a top surface;
- (c) a first insulation layer on the lower transparent electrode between the protrusions;
- (d) a plurality of first color light emitting layer which are formed on the top surfaces of the protrusions and the first insulation layer and spaced from each other with a constant interval;
- (e) a plurality of second light emitting layer formed between the plurality of first color light emitting layers;
- (f) a second insulation layer formed on the first color light emitting layers and the second color light emitting layers;
- and
- (g) an upper electrode formed with a pattern on the second insulation.
Dependencies are inferred from the claim text.