SiC power MOSFET device structure

A MOSFET device comprising:

• a. a substrate of a first conductivity type comprising silicon carbide;
• b. a first epitaxial layer of said first conductivity type located on a top side of said substrate;
• c. a second epitaxial layer of a second conductivity type located adjacent said first epitaxial layer with a lateral channel in a portion of said second epitaxial layer;
• d. an insulator layer located adjacent said second epitaxial layer;
• e. a gate electrode located adjacent said insulator layer, said gate electrode having a first side and a second side;
• f. a drift region of said first conductivity type located within said second epitaxial layer on said first side of said gate electrode, said drift region having a horizontal portion and a vertical extension which extends through said second epitaxial layer to said first epitaxial layer;
• a. a source region located within said second epitaxial layer on said second side of said gate electrode, wherein said source region is of said first conductivity type, and a body contact region located within said second epitaxial layer, wherein said body contact region is of said second conductivity type;
• and
• b. a source electrode located above said source region and said body contact region such that said source region and said body contact region are electrically connected;
• and
• c. a drain electrode located on a bottom side of said substrate.