Optical semiconductor device for neural network
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsYasuhiro Kobayashi, Kenichi Matsuda
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Abstract
An optical semiconductor device is disclosed which includes a semiconductor laser having at least an active layer, reflecting means formed on the semiconductor laser for reflecting internal feedback light generated from the semiconductor laser and at least two phototransistors formed on the reflecting means for detecting light having a wavelength substantially identical to that of laser light oscillated from the active layer.
Claims17
An optical semiconductor device comprising:
- a semiconductor laser having at least an active layer;
- reflecting means formed on the semiconductor laser for reflecting internal feedback light generated from the semiconductor laser;
- and
- at least two phototransistors formed on the reflecting means for detecting light having a wavelength substantially identical to that of laser light oscillated from the active layer.
An optical semiconductor device comprising:
- a semiconductor laser having at least an active layer;
- reflecting means formed on the semiconductor laser for reflecting internal feedback light generated from the semiconductor laser wherein the reflecting means includes a semiconductor thin-film multilayer reflecting mirror having an electrically conductive property;
- and
- at least two phototransistors formed on the reflecting means for detecting light having a wavelength substantially identical to that of laser light oscillated from the active layer.
An optical semiconductor device comprising:
- a plurality of semiconductor lasers each having at least an active layer;
- reflecting means formed on each of the plurality of semiconductor lasers for reflecting internal feedback light generated from the semiconductor laser;
- and
- at least two phototransistors formed on each reflecting means for detecting light having a wavelength substantially identical to that of laser light oscillated from the active layer.
An optical semiconductor device comprising:
- a plurality of semiconductor lasers each having at least an active layer;
- reflecting means formed on each of the plurality of semiconductor lasers for reflecting internal feedback light generated from the semiconductor laser wherein the reflecting means includes a semiconductor thin-film multilayer reflecting mirror having an electrically conductive property;
- and
- at least two phototransistors formed on the reflecting means for detecting light having a wavelength substantially identical to that of laser light oscillated from the active layer.
An optical neurochip comprising:
- a plurality of optical semiconductor devices each including;
- a plurality of semiconductor lasers each having at least an active layer;
- reflecting means formed on each of the plurality of semiconductor lasers for reflecting internal feedback light generated from the semiconductor laser;
- at least two phototransistors formed on each reflecting means for detecting light having a wavelength substantially identical to that of laser light oscillated from the active layer;
- voltage application means for applying bias voltages to the phototransistors;
- and
- a bias control circuit optically connected to each of the semiconductor lasers and each of the phototransistors, for detecting light oscillated from the semiconductor laser and applying a voltage corresponding to the intensity of the detected light to the voltage application means.
Dependencies are inferred from the claim text.