Process for forming a conductive layer for semiconductor devices
AssigneeMotorola, Inc.
InventorsJohnson O. Olowolafe, Hisao Kawasaki, Chii-Chang Lee
Life of this patent
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Abstract
An aluminum-nickel-chromium (Al-Ni-Cr) layer used as an interconnect within a semiconductor device is disclosed. The Al-Ni-Cr layer has about 0.1-0.5 weight percent nickel and about 0.02-0.1 weight percent chromium. Usually, the nickel or chromium concentrations are no greater than 0.5 weight percent. The layer is resistant to electromigration and corrosion. The low nickel and chromium concentrations allow the layer to be deposited and patterned similar to most aluminum-based layers.
Claims20
A process for forming a semiconductor device comprising the steps of:
- forming an interconnecting member over a semiconductor substrate, wherein the interconnecting member is formed by steps including:
- forming a conductive layer over the substrate, wherein:
- the conductive layer includes an alloy;
- and
- the alloy includes aluminum, nickel, and chromium, but no silicon;
- and
- etching the conductive layer, wherein the conductive layer extends along all of the interconnecting member;
- and
- forming a passivation layer over the interconnecting member.
A process for forming a semiconductor device comprising the steps of:
- forming a conductor, wherein the conductor is selected from a group consisting of a doped region lying within a semiconductor substrate, a gate electrode overlying the substrate, a silicon-containing electrode overlying the substrate, and a metal-containing member overlying the substrate;
- forming an insulating layer over the conductor and including an opening, wherein at least a portion of the conductor is exposed within the opening;
- forming an interconnecting member over the insulating layer and electrically connected to the conductor, wherein the interconnecting member is formed by steps including:
- forming a conductive layer, wherein:
- the conductive layer includes an alloy;
- the alloy includes at least 99 weight percent aluminum, about 0.1-0.5 weight percent nickel, and about 0.02-0.1 weight percent chromium, but no silicon;
- and
- a portion of the conductive layer is formed over the insulating layer and another portion of the conductive layer is formed at a location that is selected from a group consisting of overlying the opening of the insulating layer and lying within the opening of the insulating layer;
- etching the conductive layer, wherein the conductive layer extends along all of the interconnecting member;
- and
- forming a passivation layer over the interconnecting member.
A process for forming a semiconductor device comprising the steps of:
- forming a conductor, wherein the conductor is selected from a group consisting of a doped region lying within a semiconductor substrate, a gate electrode overlying the substrate, a silicon-containing electrode overlying the substrate, and a metal-containing member overlying the substrate;
- forming an insulating layer over the conductor and including an opening, wherein at least a portion of the conductor is exposed within the opening;
- forming a plug within the opening, wherein the plug is selected from a group consisting of a contact plug and a via plug;
- and
- forming an interconnecting member that includes a conductive layer that extends along all of the interconnecting member, wherein:
- a portion of the interconnecting member is formed over the insulating layer and another portion of the interconnecting member is formed overlying the plug;
- the interconnecting member includes a conductive layer that is an alloy that consists of aluminum, nickel, and chromium and has at least 99 weight percent aluminum, 0.1-0.5 weight percent nickel, and 0.02-0.1 weight percent chromium;
- and
- the interconnecting member is formed such that it is electrically connected to the conductor;
- and
- forming a passivation layer over the interconnecting member.
Dependencies are inferred from the claim text.