Method of forming a ferromagnetic memory device

A method for forming a memory cell comprising the steps of:

• forming a transistor having a first current electrode, a second current electrode, and a control electrode;
• forming a dielectric layer overlying the transistor;
• forming a ferromagnetic core overlying the transistor;
• and
• forming a bit line conductor which is coupled to the first current electrode of the transistor and passes in close proximity to the ferromagnetic core.

A method for forming a ferromagnetic memory circuit comprising the step of:

• forming a transistor having a first current electrode, a second current electrode for receiving a power supply voltage, and a control electrode;
• forming a ferromagnetic core positioned in close proximity to the transistor wherein the ferromagnetic core and the transistor are formed overlying the same substrate material;
• forming a power supply line conductor coupled to the second current electrode of the transistor;
• forming a bit line conductor passing through the ferromagnetic core and being coupled to the first current electrode of said transistor;
• and
• forming a word line conductor coupled to the control electrode of the transistor.

A method for forming an integrated circuit memory cell comprising the steps of:

• providing a semiconductor substrate;
• forming a transistor device within the semiconductor substrate;
• forming a dielectric layer overlying the transistor device;
• and
• forming an annular ferromagnetic core overlying the dielectric layer and being coupled to the transistor device.

A method for forming a semiconductor magnetic memory device comprising the steps of:

• forming a substrate;
• forming a transistor formed from the substrate and having a first current electrode overlying the substrate, a second current electrode overlying the substrate and being separated from the first current electrode by a channel region, and a gate electrode which overlies the channel region;
• forming a first dielectric layer formed overlying the transistor;
• forming a ferromagnetic region formed overlying the first dielectric layer, the ferromagnetic region having a sidewall;
• forming a second dielectric layer formed overlying the ferromagnetic region;
• and
• forming a first conductive region formed adjacent the sidewall of the ferromagnetic region.