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US 5,385,762 AGranted
Diamond doping
OwnerJohan F. Prinsinventor
Life of this patent
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Abstract
A method of producing a doped diamond, typically a boron doped diamond, is provided. The method involves multiple cold implantation/rapid annealing steps. A doped diamond can be produced containing a high concentration of dopant atoms.
Claims13
A method of producing a doped diamond comprising the steps of:
- (i) creating a damaged layer of point defects in the form of vacancies and interstitial atoms within the crystal lattice of a diamond using low dose ion implantation at low temperature;
- (ii) introducing dopant atoms into the damaged layer using low dose ion implantation at low temperature;
- (iii) rapidly annealing the product of step (ii) to reduce lattice damage and to cause dopant interstitial atoms to diffuse into lattice positions;
- and
- (iv) repeating steps (i) to (iii) within the same layer until a doped diamond having a desired amount of dopant is produced wherein the amount of dopant is greater than could be achieved with a single doping without causing amorphisation of the diamond.
2 more elements
A method according to claim I wherein the dopant atoms are selected from nitrogen, boron, arsenic and phosphorus.
A method according to claim i wherein the steps (i) to (iii) are repeated at least five times.
A method according to claim I wherein the ion implantation of steps (i) and (ii) is carried out at a temperature of liquid nitrogen or lower.
Dependencies are inferred from the claim text.