Free standing quantum well structure
AssigneeAT&T Corp.
InventorsWayne H. Knox, Stephen C. Shunk, Michael D. Williams, Jane E. Zucker
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Abstract
Conventional microfabrication techniques in conjunction with the precise growth of layers of single crystalline materials by epitaxial growth techniques allow the creation of electro-optic microstructures which achieve high reflectivity with only few periods of layer pairs. Standard lithographic techniques are utilized to fabricate quantum wells which are confined on both sides by air, acrylic resin, or vacuum. The quantum wells are fabricated from spatially and compositionally modulated III-V superlattices in which alternate layers of the structures are sacrificed by selective etching. The structures are patterned such that the quantum wells are suspended between support posts.
Claims19
A semiconductor structure comprising:
- a first layer for forming a first quantum well;
- a second layer for forming a second quantum well;
- and
- support means for supporting said first and second layers in a fixed spaced relationship separated by a gap of approximately between 100 .ANG. and 2500 .ANG. from one another.
A laser structure comprising:
- laser means formed as a Fabry-Perot cavity for producing a laser emission;
- and
- first and second mirror structures arranged on each side of said laser means and separated therefrom by a gap.
A Bragg mirror structure comprising:
- a first layer of GaAs for forming a first quantum well;
- a second layer of GaAs for forming a second quantum well;
- support means for supporting said first and second layers in a fixed spaced relationship separated by a gap from one another;
- and
- electrode means coupled electrically to said first and second layers for facilitating application of an electric field to said first and second layers.
A method of forming a semiconductor quantum well lattice having high reflectivity, the method comprising the steps of:
- epitaxially growing on a substrate a plurality of layers of crystalline material as a superlattice, periodic ones of said layers of crystalline material constituting respective quantum wells;
- transferring a mask pattern to the epitaxially grown superlattice;
- etching to expose the superlattice;
- and
- selectively etching sidewalls of the superlattice to bare the quantum wells.
Dependencies are inferred from the claim text.