Semiconductor device including semiconductor diamond
AssigneeSumitomo Electric Industries, Ltd.
InventorsYoshiki Nishibayashi, Tadashi Tomikawa, Shinichi Shikata
Life of this patent
Estimating the term…
Abstract
A semiconductor device having an MISFET-like structure. The semiconductor device comprises: an p-type semiconductor diamond layer disposed on an insulating diamond substrate for providing a channel region; and a drain electrode, a source electrode and a gate electrode disposed on the p-type diamond layer. An intermediate region comprising diamond doped with at least an n-type dopant such as nitrogen atoms, is formed between the channel region and the gate electrode.
Claims21
A semiconductor device, comprising:
- a source electrode and a drain electrode disposed on a substrate;
- a channel region located between the source and drain electrodes, which comprises p-type diamond as a main component;
- a gate electrode disposed on the channel region;
- and an intermediate region formed between the channel region and the gate electrode, which comprises diamond doped with at least an n-type dopant.
A semiconductor device, comprising:
- a source electrode and a drain electrode disposed on a substrate;
- a channel region located between the source and drain electrodes, which comprises p-type diamond as a main component;
- a gate electrode disposed on the channel region;
- and an insulating layer and a layer containing an n-type dopant which are formed between the channel region and the gate electrode in this order from the gate electrode side.
A semiconductor device, comprising:
- a source electrode and a drain electrode disposed on a substrate;
- a channel region located between the source and drain electrodes, which comprises p-type diamond as a main component;
- a gate electrode disposed on the channel region;
- and an insulating region which is formed between the channel region and the gate electrode, and is formed by ion implantation into p-type diamond.
A semiconductor device, comprising:
- a source electrode and a drain electrode disposed on a substrate;
- a channel region located between the source and drain electrodes, which comprises p-type diamond as a main component;
- a gate electrode disposed on the channel region;
- and an intermediate region formed between the channel region and the gate electrode, which comprises diamond doped with at least an n-type or p-type dopant in a predetermined amount.
A semiconductor device, comprising:
- a source electrode and a drain electrode disposed on a substrate;
- a channel region located between the source and drain electrodes, which comprises p-type diamond as a main component;
- a gate electrode disposed on the channel region;
- and an intermediate region formed between the channel region and the gate electrode, which comprises diamond doped with at least an n-type or p-type dopant.
Dependencies are inferred from the claim text.