Method of forming etch mask using particle beam deposition
AssigneeMicroelectronics and Computer Technology Corporation
InventorNalin Kumar
Life of this patent
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Abstract
A method of forming an etch mask and patterning a substrate. The method includes directing a particle beam at a substrate without using a mask to deposit an etch mask on the substrate which selectively exposes predetermined portions of the substrate, the etch mask consisting of particles mechanically placed on the substrate by the particle beam, and then etching the exposed portions of the substrate through the etch mask to form channels therein. The process is well suited to fabricating high density copper/polyimide multi-chip modules.
Claims18
A method of forming channels in a substrate, comprising the steps of:
- directing a particle beam at a substrate by direct-write using a liquid metal cluster source without using a mask to deposit an etch mask on the substrate which selectively exposes predetermined portions of the substrate, said etch mask consisting of particles mechanically placed on the substrate by the particle beam;
- and then
- etching the exposed portions of the substrate through the etch mask to form channels in the substrate and removing the etch mask from the substrate.
A method of forming channels in a substrate, comprising the steps of:
- directing a neutral particle beam at a substrate, by direct-write using a liquid metal cluster source without using a mask to deposit an etch mask on the substrate which selectively exposes predetermined portions of the substrate, said etch mask consisting of particles mechanically placed on the substrate by the neutral particle beam;
- and then
- etching the exposed portions of the substrate through the etch mask to form channels in the substrate.
A method of forming channels in a substrate, comprising the steps of:
- directing a particle beam at a substrate without using a mask to deposit an etch mask on the substrate which selectively exposes predetermined portions of the substrate, said etch mask consisting of particles mechanically placed on the substrate by the particle beam rendered neutral by an electron beam;
- and then
- etching the exposed portions of the substrate through the etch mask to form channels in the substrate.
A method of forming channels in a substrate, comprising the steps of:
- directing a particle beam at a substrate without using a mask to deposit an etch mask on the substrate which selectively exposes predetermined portions of the substrate, said etch mask consisting of particles mechanically placed on the substrate by the particle beam wherein said particles are mechanically placed on said substrate without assistance from an electron beam, laser beam, muon beam, positron beam or offset printing;
- and then
- etching the exposed portions of the substrate through the etch mask to form channels in the substrate and removing the etch mask from the substrate.
Dependencies are inferred from the claim text.