Thin-film edge field emitter device and method of manufacture therefor

A thin-film edge field emitter device comprising:

• (a) a substrate having a first portion and having a protuberance extending from said first portion, said protuberance defining at least one side-wall, said side-wall constituting a second portion;
• and
• (b) at least four layers disposed on said substrate including said second portion, two of said at least four layers each comprising a thin conductive film including a portion extending beyond said second portion and defining an exposed edge, one of said two layers being suitable for use as an extraction gate and the other of said two layers being suitable for use as an emitter layer, the exposed edge of said layer suitable for use as an emitter layer being suitable for electron emission;
• and a further two of said at least four layers comprising electrically insulating layers disposed on opposite sides of said layer suitable for use as an emitter layer between the layer suitable for use as an extraction gate and said second portion.

An integrally gated thin-film edge field emitter device comprising:

• (a) a substrate having a first portion, said substrate further including a protuberance which projects from said first portion, said protuberance having at least one side-wall and an upper surface, said side-wall constituting a second portion;
• (b) a first extraction gate comprising a first, electrically conductive layer including a portion covering said upper surface and a side conductive portion extending substantially parallel to said second portion, said side conductive portion including an exposed upper edge extending beyond said upper surface, said first extraction gate being suitable for use as an extraction gate;
• (c) a first insulator comprising a second, electrically insulating layer including a portion covering said first portion and further including a portion overlying said second portion;
• (d) an emitter layer comprising a third, electrically conductive layer overlying said first insulator, said third, electrically conductive layer including a portion extending substantially parallel to said second portion and defining an exposed upper edge, extending beyond said upper surface for emitting electrons therefrom, said emitter layer being suitable for use as an emitter;
• (e) a second insulator comprising a fourth, electrically insulating layer overlying said emitter layer;
• and
• (f) a second extraction gate comprising a fifth, conductive layer overlying said second insulator and including a portion extending substantially parallel to said second portion and including an exposed upper edge extending beyond said upper surface, said second extraction gate being suitable for use as an extraction gate.

An integrally gated thin-film edge field emitter device comprising:

• (a) a substrate having a first portion, said substrate further including a protuberance which projects from said first portion, said protuberance having at least one side-wall and an upper surface, said side-wall constituting a second portion, said substrate being suitable for use as an extraction gate;
• (b) a first insulator comprising a first, electrically insulating layer including a top portion covering said first portion and further comprising a portion covering said second portion;
• (c) an emitter layer comprising a second, electrically conductive layer overlying said first insulator, said second, electrically conductive layer including a portion extending substantially parallel to said second portion and defining an exposed upper edge extending beyond said upper surface of said raised portion for emitting electrons therefrom, said emitter layer being suitable for use as an emitter;
• (d) an second insulator comprising a third, electrically insulating layer overlying said emitter layer and;
• (e) a second extraction gate comprising a fourth, conductive layer overlying said second insulator and including a portion extending substantially parallel to said second portion and including an exposed upper edge extending beyond said upper surface, said second extraction gate being suitable for use as an extraction gate.

An integrally gated thin-film edge field emitter device comprising:

• (a) a substrate having a first portion, said substrate further including a protuberance which projects from said first portion, said protuberance having at least one side-wall and an upper surface, said side-wall constituting a second portion;
• (b) a first extraction gate comprising a first, electrically conductive layer including a portion covering said first portion and including a side conductive portion extending substantially parallel to said second portion, said side conductive portion including an exposed upper edge extending beyond said upper surface, said first extraction gate being suitable for use as an extraction gate;
• (c) a first insulator comprising a second, electrically insulating layer including a portion covering said first portion and further including a portion overlying said second portion;
• (d) an emitter layer comprising a third, electrically conductive layer overlying said first insulator, said third, electrically conductive layer including a portion extending substantially parallel to said second portion and defining an exposed upper edge extending beyond said upper surface for emitting electrons therefrom, said emitter layer being suitable for use as an emitter;
• (e) a second insulator comprising a fourth, electrically insulating layer overlying said emitter layer;
• and
• (f) a second extraction gate comprising a fifth, conductive layer overlying said second insulator and including a portion extending substantially parallel to said second portion and including an exposed upper edge extending beyond said upper surface, said second extraction gate being suitable for use as an extraction gate.