Methods for the formation of a silicon oxide film
AssigneeDow Corning Toray Silicone Co., Ltd.
InventorsKatsutoshi Mine, Takashi Nakamura, Motoshi Sasaki
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Abstract
Disclosed is a method for the formation of ceramic silicon oxide films on substrate surfaces wherein said films are thick, free of cracks and pinholes, and insoluble in organic solvents. These films are formed by coating the surface of a substrate with a silicon resin having the general formula (HR.sub.2 SiO.sub.1/2).sub.X (SiO.sub.4/2).sub.1.0 wherein R is selected from the set comprising the hydrogen atom, alkyl groups, and aryl groups, and 0.1.ltoreq.X.ltoreq.2.0, and then heating the coated substrate to convert the coating into a ceramic silicon oxide film.
Claims18
A method for the formation of a silicon oxide film on a substrate comprising:
- forming a coating on the surface of a substrate, wherein the base component of the coating is a silicon resin with the general formula
- (HR.sub.2 SiO.sub.1/2).sub.X (SiO.sub.4/2).sub.1.0
- and wherein R is selected from the group consisting of the hydrogen atom, alkyl groups, and aryl groups and 0.1.ltoreq.X.ltoreq.2.0;
- and
- converting the coating into a ceramic silicon oxide film by heating the coated substrate.
A method for the formation of a silicon oxide film on a substrate comprising:
- forming a coating on the surface of a substrate, wherein the base component of the coating is a silicon resin with the general formula
- (HR.sub.2 SiO.sub.1/2).sub.X (SiO.sub.4/2).sub.1.0
- and wherein R is selected from the group consisting of the hydrogen atom, alkyl groups, and aryl groups and 0.1.ltoreq.X.ltoreq.2.0;
- and
- converting the coating into a ceramic silicon oxide film by heating the coated substrate ill an atmosphere that contains less than 20 volume % oxygen gas.
A method for the formation of a silicon oxide film on a substrate comprising:
- forming a coating on the surface of a substrate, wherein the base component of the coating is a silicon resin with the general formula
- (HR.sub.2 SiO.sub.1/2).sub.X (SiO.sub.4/2).sub.1.0
- and wherein R is selected from the group consisting of the hydrogen atom, alkyl groups, and aryl groups and 0.1.ltoreq.X.ltoreq.2.0;
- and
- converting the coating into a ceramic silicon oxide film by heating the coated substrate in an atmosphere that contains at least 20 volume % oxygen gas.
Dependencies are inferred from the claim text.