Method for formation of a trench accessible cold-cathode field emission device
AssigneeMicron Display Technology, Inc.
InventorsKevin Tjaden, J. Brett Rolfson
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Abstract
A field emitter structure is formed, having trench accessible cold cathode tips is fabricated by forming trenches in a substrate. The trenches are subsequently filled with a conformal insulating layer, a highly conductive layer, and a polysilicon layer. The layers are etched to form emitter tips which are disposed contiguous with the trenches. Electrical signals are propagated through the trenches permitting increased performance of the emitter structure.
Claims19
A cathode emitter structure comprising:
- a substrate having troughs disposed therein;
- a conformal insulating layer disposed superjacent said substrate, said conformal insulating layer being a dielectric, and said dielectric comprising at least one of silicon dioxide, silicon nitride, BPSG, and TEOS;
- a highly conductive material layer substantially filling said troughs;
- and
- emitter tips disposed superjacent said highly conductive material layer.
A cathode emitter structure having a plurality of troughs disposed in a substrate, a conductive material layer substantially filling said troughs, and emitter tips disposed superjacent said conductive material layer, the structure formed by:
- forming trenches in a substrate;
- creating a conformal insulating layer superjacent said substrate, said conformal insulating layer for isolating emitter tips;
- depositing a conductive layer superjacent said insulated trenches, said conductive layer for propagating an electrical signal through said trenches to said emitter tips;
- and
- etching said conductive layer thereby forming the emitter tips.
A method for the formation of a baseplate having isolated emitter structures, said method comprising the following steps of:
- forming troughs in a substrate;
- depositing a highly conductive layer superjacent said substrate;
- depositing cathode material layer superjacent said conductive layer, said cathode material layer comprising polysilicon;
- and
- etching said layers, thereby forming cathodes contiguous with said troughs, said cathodes being disposed above said troughs.
Dependencies are inferred from the claim text.