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AssigneeAdvanced Semiconductor Materials America, Inc.
InventorsWiebe B. deBoer, Albert E. Ozias
Estimating the term…
A rotatable substrate supporting mechanism for use in a chemical vapor deposition reaction chamber of the type used in producing semi-conductor devices is provided with a susceptor for supporting a single substrate, or wafer, for rotation about an axis normal to the center of the wafer. The mechanism is provided with a temperature sensing system for producing signals indicative of sensed temperatures taken at the center of the susceptor and at various points about the periphery thereof. A gas purging system is provided for inhibiting the flow of reactant gas in unwanted areas of the reaction chamber and in the supporting system itself. Rotational driving of the mechanism is accomplished by a variable speed motor under control of a circuit which stops and starts the rotation at controlled speeds and stops the rotation at a home position for enhancing the handling of the wafers.
An apparatus used for chemical vapor deposition of materials on substrates, comprising:
Chemical vapor deposition apparatus, comprising a generally circular substantially planar susceptor having an upper surface for centrally receiving a substrate for deposition purposes, said upper surface having a plurality of intersecting grooves to allow the free flow of gases between the substrate and the susceptor, said susceptor has a lower surface with one or more recesses;
Chemical vapor deposition apparatus, comprising a generally circular substantially planar susceptor having an upper surface for centrally receiving a substrate for deposition purposes, said upper surface having a plurality of intersecting grooves to allow the free flow of gases between the substrate and the susceptor;
Chemical vapor deposition apparatus comprising a ring for positioning in concentric relation with a susceptor adapted to receive a substrate for deposition purposes, said ring having a thin flat, generally rectangular cross section with a flat imperforate, upper wall, and an annular, imperforate inner wall, said ring further including a support supporting one or more sensors which sense the temperature of said ring close to said inner wall of said ring so as to be close to the periphery of the susceptor when installed in a vapor deposition chamber, for the purpose of monitoring the temperature at the periphery of the susceptor.
Dependencies are inferred from the claim text.