Semiconductor devices with native aluminum oxide regions
AssigneeThe Board of Trustees of the University of Illinois
InventorsNick Holonyak, Jr., John M. Dallesasse
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Abstract
A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375.degree. C. to convert at least a portion of said aluminum-bearing material to a native oxide characterized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.
Claims13
A semiconductor laser which comprises:
- a semiconductor substrate layer;
- a first confining layer on said substrate layer;
- an active region on said first confining layer;
- a second confining layer on said active region, said second confining layer comprised of a first aluminum-bearing Group III-V semiconductor material;
- a current blocking layer on said second confining layer, said current blocking layer comprising a native oxide formed by the method of exposing at least part of the surface of said second confining layer to a water-containing environment and a temperature of at least about 375.degree. C. for a time sufficient to convert at least a portion of said second confining layer to said native oxide, the thickness of said native oxide layer being substantially the same as or less than the thickness of that portion of said second confining layer thus converted;
- reflective facets at opposing edges of said active region;
- and
- means for applying an electric potential across said first and second confining layers.
A semiconductor light emitting device, comprising:
- a semiconductor active region disposed between first and second confining regions of semiconductor material;
- an insulating region adjacent said second confining region, said insulating region comprising a native oxide formed from an aluminum-bearing III-V semiconductor material by exposing said aluminum-bearing III-V semiconductor material to a water containing environment and a temperature of at least about 375.degree. C. to convert at least a portion of said III-V semiconductor material to said native oxide;
- and
- means for applying electric potential across said upper and lower confining regions.
A semiconductor laser device, comprising:
- a semiconductor active region disposed between first and second confining regions of semiconductor material;
- an insulating region adjacent said second confining region, said insulating region comprising a native oxide formed from an aluminum-bearing III-V semiconductor material by exposing said aluminum-bearing III-V semiconductor material to a water containing environment and a temperature of at least about 375.degree. C. to convert at least a portion of said III-V semiconductor material to said native oxide;
- and
- reflective facets at opposing edges of said active region;
- means for applying electric potential across said upper and lower confining regions.
Dependencies are inferred from the claim text.