US 5,373,182 AGranted

Integrated IR and visible detector

AssigneeSanta Barbara Research Center

InventorPaul R. Norton

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Abstract

A radiation detector (1) includes a multi-layered substrate (2,10) having a first major surface, which is a radiation receiving surface, and a second major surface disposed opposite to the first major surface. A first detector is formed adjacent to the first major surface, the first detector being responsive to a wavelength or wavelengths of electromagnetic radiation in the range of approximately 0.3 micrometers (near-UV) to approximately 1.2 micrometers (near-IR). A second detector is formed adjacent to the second major surface of the multi-layered substrate, the second detector being responsive to a wavelength or wavelengths of electromagnetic radiation in the range of approximately one micrometer to approximately twenty micrometers (SWIR to VLWIR). In a presently preferred embodiment the second detector is simultaneously responsive to IR radiation within two distinct spectral bands.

Claims7

Dependent claims

A visible radiation/two-color IR radiation detector:

comprising:
a first substrate having a plurality radiation detectors fabricated adjacent radiation receiving first surface of said first substrate, said first substrate having a second surface that is opposite the first surface;
and
a second substrate comprised of a Group II-VI semiconductor material, said second substrate having a first surface disposed over the second surface of said first substrate, said second substrate having a plurality of two-color IR radiation detectors fabricated adjacent to a second surface, the second surface of the substrate being opposite the first surface of the second substrate, each of said two-color IR radiation detectors including:
a first HGCdTe region having a first electrical conductivity and a bandgap selected for absorbing radiation first IR spectral band;
a second HgCdTe region having the first type of electrical conductivity and a bandgap selected for absorbing radiation within a second IR spectral band that differs from the first IR spectral band;
and
a third HgCdTe region having a second type of electrical conductivity that is opposite the first type of electrical conductivity, said third HgCdTe region being interposed between said first and said second HgCdTe regions for forming a first heterojunction with said first HgCdTe region and for forming a second heterojunction with said second HgCdTe region.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 08/003,715Filed 12 Jan 1993
Granted: 13 Dec 1994
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10F 30/10
Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors: the…
H10F 30/288
The devices being sensitive to infrared, visible or ultraviolet radiation: the devices being sensitive to multiple wavelengths, e.g.…
H10F 39/107
Integrated devices: having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
H10F 77/1237
Comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe: having at least three elements, e.g. HgCdTe